The IGOT60R070D1 from Infineon Technologies is an Enhancement Mode GaN Power Transistor. The transistor has a drain-source voltage of up to 600 V and a drain-source resistance of 70 milli-ohms. It has a continuous drain current of up to 31 A and a pulsed drain current of up to 60 A. The transistor has a power dissipation of up to 125 W with better system efficiency and power density. It operates on half-bridge topology and offers fast turn-on and turn-off speed and minimum switching losses. This RoHS-compliant transistor reduces electromagnetic interference and is capable of reverse conduction. It is available in a surface-mount package and is ideal for industrial, telecom, datacenter SMPS applications.
