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GS66508P

GaN Power Transistor by GaN Systems (25 more products)
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The GS66508P from GaN Systems is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 50 to 129 milli-ohm, Continous Drain Current 25 to 30 A, Pulsed Drain Current 72 A. Tags: Die. More details for GS66508P can be seen below.

Product Specifications

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Product Details

  • Part Number
    GS66508P
  • Manufacturer
    GaN Systems
  • Description
    650 V Enhancement Mode GaN Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    50 to 129 milli-ohm
  • Continous Drain Current
    25 to 30 A
  • Pulsed Drain Current
    72 A
  • Total Charge
    5.8 nC
  • Input Capacitance
    260 pF
  • Output Capacitance
    65 pF
  • Turn-on Delay Time
    4.1 ns
  • Turn-off Delay Time
    8 ns
  • Rise Time
    3.7 ns
  • Fall Time
    5.2 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    GaNPX
  • Applications
    High efficiency power conversion, High density power conversion, AC-DC Converters, Bridgeless Totem Pole PFC, ZVS Phase Shifted Full Bridge, Half Bridge topologies, Synchronous Buck or Boost, Uninterruptable Power Supplies, Industrial Motor Drives, Single
  • Dimensions
    10.0 x 8.7 x 0.51 mm

Technical Documents
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