The ISG6108QA from Innoscience is an Enhancement Mode GaN Field Effect Transistor that is ideal for AC-DC/DC-DC/DC-AC power supply, power factor correction (PFC), QR flyback, ACF, half-bridge, full-bridge, PD adaptor, LED lighting, solar micro inverter, server, and telecom power supply applications. This transistor has a drain-source voltage of up to 700 V and a drain-source on-resistance of 230 milli-ohms. It has a continuous drain current of up to 5 A and a pulsed drain current of less than 10 A. This GaN transistor integrates a high-voltage linear regulator that eliminates the need for an external LDO regulator while maintaining a tightly regulated gate drive voltage. It includes a programmable first-stage turn-on speed for slew rate control and a delayed second-stage turn-on enhancement function to achieve a high frequency, high efficiency, and low noise (EMI) performance.

This GaN transistor enhances system efficiency by employing a lossless current sense circuit in place of an external current sense resistor. It has zero reverse recovery charge and fast propagation delay with high dv/dt immunity, making it suitable for high-frequency applications up to 2 MHz. This transistor is equipped with under-voltage lockout (UVLO), over-current protection (OCP), and over-temperature protection (OTP) capabilities for high reliability. It is available in a surface-mount package that measures 6 x 8 mm.