The EPC2308 from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that is designed to provide very high switching frequency, high efficiency, and low on-time in an ultra-small footprint. It has a drain-source voltage of over 150 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of less than 6 milli-ohms. This transistor has a continuous drain current of up to 48 A and a pulsed drain current of less than 157 A. It is based on GaN semiconductor technology that offers exceptionally high electron mobility and low-temperature coefficient, which results in a very low drain-source on-resistance.

This RoHS-compliant power transistor has a lateral structure that provides low gate charge and integrates a majority charge carrier diode that ensures zero reverse recovery charge. It is available in a thermally enhanced surface-mount package that measures 3 x 5 mm and is ideal for high-density DC-DC conversion from 80 - 100 V, synchronous rectification from 28 - 54 V for chargers, adapters, and power supplies, motor drive, and DC-DC for battery operated power tools and robots, USB fast chargers, and AC/DC applications.