The EPC2218A from Efficient Power Conversion is an N-Channel Enhancement Mode GaN Power Transistor that is ideal for sync rectification for AC/DC and DC-DC converters, BLDC motor drives, DC-DC converters, point-of-load converters, e-mobility, Class D audio, automotive LiDAR/ToF, USB-C, and LED lighting applications. It has a drain-source of over 80 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of less than 3.2 milli-ohms. This transistor has a continuous drain current of up to 60 A and a pulsed drain current of less than 231 A. It is manufactured on GaN technology that ensures exceptionally high electron mobility and low-temperature coefficient resulting in very low drain-source on-resistance. This GaN power transistor consists of a lateral device structure that provides a low gate charge and integrates a majority carrier diode that offers zero reverse recovery charge. It is available as a passivated die that measures 3.5 x 1.95 mm.