The EPC2361 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor that is ideal for synchronous rectification, DC-DC conversion, motor drives, and solar MPPT applications. It has a drain-to-source voltage of over 100 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 1 milli-ohm. The GaN transistor has a continuous drain current of up to 101 A and a pulsed drain current of less than 519 A. It offers extremely high electron mobility and a low-temperature coefficient, resulting in low drain-source on-resistance values.  This GaN power transistor consists of a lateral structure that provides a low gate charge and integrates a majority charge carrier diode with zero reverse recovery charge.

This RoHS-compliant GaN power transistor has a small footprint and offers high power density, low conduction losses, and lower switching losses that result in higher efficiency. It is available in a surface mount package that measures 3 x 5 mm.