The EPC7019G from EPC Space is a GaN Power Transistor that has been specifically designed for critical applications in high reliability or commercial satellite space environments. It has a gate threshold voltage of 0.8 to 2.5 V and a drain-source voltage of 40 V with a drain-source resistance of 3.7 milliohm. It has a gate-source voltage of -4 to 6 V. This GaN transistor has a continuous drain current of 95 A and a pulsed drain current of 530 A. It has exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain to source resistance. The lateral structure of the die provides a very low gate charge and offers extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, and higher efficiencies. This transistor is available in a surface-mount package that measures 8.0 x 5.6 mm and is ideal for applications such as satellite and avionics, deep space probes, high-speed rad-hard DC-DC conversion, nuclear facilities, and rad-hard motor controllers.