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EPC2207

GaN Power Transistor by Efficient Power Conversion (95 more products)
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EPC2207 Image

The EPC2207 from Efficient Power Conversion is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 200 V, Drain Source Resistance 15 to 22 milli-ohm, Continous Drain Current 14 A, Pulsed Drain Current 54 A. Tags: Die. More details for EPC2207 can be seen below.

Product Specifications

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Product Details

  • Part Number
    EPC2207
  • Manufacturer
    Efficient Power Conversion
  • Description
    200 V Enhancement-Mode GaN Power Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    15 to 22 milli-ohm
  • Continous Drain Current
    14 A
  • Pulsed Drain Current
    54 A
  • Total Charge
    4.5 to 5.9 nC
  • Input Capacitance
    454 to 600 pF
  • Output Capacitance
    130 to 195 pF
  • Temperature operating range
    -40 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    LGA
  • Applications
    DC-DC Converters, Sync rectification for AC/DC & DC-DC, USB-C PD Quick Chargers & Adaptors, BLDC Motor Drives, Lidar, Class-D Audio
  • Dimensions
    2.9 x 0.9 mm

Technical Documents
View details on the manufacturer's website
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