The FBG04N08A from EPC Space is a Radiation Hard GaN Power Transistor that has been specifically designed for critical applications in high-reliability or commercial satellite space environments. This transistor has a drain-to-source voltage of up to 40 V, a gate threshold voltage of 1.4 V, and a drain-source on-resistance of less than 28 mΩ. It has a continuous drain current of up to 8 A and a pulsed drain current of less than 32 A. This power transistor provides exceptionally high electron mobility and low-temperature coefficient, thereby offering a very low drain-source on-resistance. It has a lateral structure that results in a very low gate charge and an extremely fast switching time.

The FBG04N08A is available in a surface-mount package that measures 3.4 x 3.4 x 2.29 mm and is ideal for satellites, avionics, rad-hard motor controllers, high-speed rad-hard DC-DC conversion, and deep space probe applications.