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GS-065-008-1-L

GaN Power Transistor by GaN Systems (25 more products)
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GS-065-008-1-L Image

The GS-065-008-1-L from GaN Systems is a GaN Power Transistor with Gate Threshold Voltage 1.1 to 2.6 V, Drain Source Voltage 650 V, Drain Source Resistance 225 to 569 milli-ohm, Continous Drain Current 5 to 8 A, Pulsed Drain Current 13.5 A. Tags: Die. More details for GS-065-008-1-L can be seen below.

Product Specifications

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Product Details

  • Part Number
    GS-065-008-1-L
  • Manufacturer
    GaN Systems
  • Description
    650 V Enhancement Mode GaN Transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.1 to 2.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    225 to 569 milli-ohm
  • Continous Drain Current
    5 to 8 A
  • Pulsed Drain Current
    13.5 A
  • Total Charge
    1.6 nC
  • Input Capacitance
    54 pF
  • Output Capacitance
    14 pF
  • Turn-on Delay Time
    2.4 ns
  • Turn-off Delay Time
    6 ns
  • Rise Time
    4.8 ns
  • Fall Time
    8 ns
  • Temperature operating range
    -55 to +150 °C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    PDFN
  • Applications
    Power adapters, LED lighting drivers, fast battery charging, power factor correction, appliance motor drives, wireless power transfer, and industrial power supplies
  • Dimensions
    5.0 x 6.0 x 0.85 mm

Technical Documents
View details on the manufacturer's website
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