The GS61004B from GaN Systems is an Enhancement Mode GaN-on-Silicon Power Transistor. It has a gate threshold voltage of 1.7 V, drain-source voltage of 100 V, and has a drain-source resistance of 16 mOhm. The transistor has a continuous drain current of 38 A and a pulsed drain current of 60 A. It is fabricated using patented Island and GaNPX packaging technologies. The GaNPX packaging technology enables low inductance & low thermal resistance. This bottom-cooled transistor offers very low junction-to-case thermal resistance for demanding high-power applications. 

The GS61004B is available as a die that measures 4.6 x 4.4 sq mm and is ideal for enterprise and networking power, uninterruptable power supplies, industrial motor drives, solar power, fast battery charging, class D audio amplifiers, smart home, and wireless power transfer applications.