The GS61008P from GaN Systems is an Enhancement Mode GaN Power Transistor. It has a drain-source voltage of less than 100 V and a gate-source threshold voltage of 1.7 V. This GaN transistor has a continuous drain current of up to 90 A and a pulsed drain current of less than 140 A. It has a drain-source on-resistance of 7 mΩ. This GaN transistor is manufactured based on patented Island Technology and uses GaNPX packaging that offers low inductance and low thermal resistance. It has a bottom-side cooled configuration that offers very low junction-to-case thermal resistance. This RoHS 3 (6 + 4) compliant transistor is available as a die that measures 7.6 x 4.6 mm and is ideal for energy storage systems, AC-DC converters, UPS, industrial motor drives, fast battery charging, Class D audio amplifiers, traction drive, robotics, and wireless power transfer applications.