The GPI120R12T74IC from GaNPower International is an N-channel GaN Power Transistor ideal for switching power, power adapters, and power delivery charger applications. This GaN transistor has a drain-source voltage of up to 1200 V and a drain-source on-resistance of less than 18 milli-ohms. It has a continuous drain current of 120 A and a quiescent leakage current of 42 µA. This transistor operates at high switching speed and has a high dv/dt capability. It has a low drain-to-source resistance, resulting in less power loss. This transistor is available in a through-hole package that measures 15.70 x 40.64 mm.
