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GPIHV15DK

GaN Power Transistor by GaNPower International (30 more products)
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The GPIHV15DK from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.9 V, Drain Source Voltage 1200 V, Drain Source Resistance 100 to 110 milli-ohm, Continous Drain Current 15 A, Total Charge 6.5 nC. Tags: Surface Mount. More details for GPIHV15DK can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPIHV15DK
  • Manufacturer
    GaNPower International
  • Description
    1200 V, 100 to 110 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.9 V
  • Drain Source Voltage
    1200 V
  • Drain Source Resistance
    100 to 110 milli-ohm
  • Continous Drain Current
    15 A
  • Total Charge
    6.5 nC
  • Input Capacitance
    124 pF
  • Output Capacitance
    38 pF
  • Turn-on Delay Time
    14 ns
  • Turn-off Delay Time
    15 ns
  • Rise Time
    43 ns
  • Fall Time
    16 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO252
  • Applications
    Switching Power Applications, UPS, Inverters

Technical Documents
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