The IGLD65R110D2 from Infineon Technologies is an Enhancement Mode GaN Power Transistor that is ideal for industrial, datacenter SMPS, telecom, and charger/adapter (based on half-bridge topologies for hard and soft-switching such as totem pole PFC and high-frequency LLC) applications. It has a drain-source voltage of up to 650 V, a gate threshold voltage of 1.2 V, and a drain-source on-resistance of 110 milli-ohms. This transistor has a continuous drain current of up to 14 A and a pulsed drain current of less than 30 A. It uses Infineon’s CoolGaN transistor technology that enables efficient power conversion in the voltage range of up to 650 V. This GaN transistor provides very fast switching speed and is capable of reverse conduction while ensuring zero reverse recovery charge. It offers superior commutation ruggedness for high reliability along with system cost reduction savings.

This RoHS-compliant GaN power transistor complies with electrostatic discharge (HBM/CDM) JEDEC standards and reduces electromagnetic interference (EMI), which contributes to improved system efficiency and power density. It is housed in a bottom-sided cooled package for optimal power dissipation and is available in a surface-mount package that measures 8.10 x 8.10 mm.