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IGLR60R340D1

GaN Power Transistor by Infineon Technologies (46 more products)
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The IGLR60R340D1 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 1.6 V, Drain Source Voltage 600 V, Drain Source Resistance 270 to 490 milli-ohm, Continous Drain Current 8.2 A, Pulsed Drain Current 12.2 A. Tags: Surface Mount. More details for IGLR60R340D1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGLR60R340D1
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, 270 to 490 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.7 to 1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    270 to 490 milli-ohm
  • Continous Drain Current
    8.2 A
  • Pulsed Drain Current
    12.2 A
  • Total Charge
    1.2 nC
  • Input Capacitance
    87.7 pF
  • Output Capacitance
    17 pF
  • Turn-on Delay Time
    7 ns
  • Turn-off Delay Time
    12 ns
  • Rise Time
    6 ns
  • Fall Time
    40 ns
  • Temperature operating range
    -40 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TSON-8

Technical Documents
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