1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Infineon Technologies
  6. IGLR65R200D2

IGLR65R200D2

GaN Power Transistor by Infineon Technologies (46 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

The IGLR65R200D2 from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 1.6 V, Drain Source Voltage 650 V, Drain Source Resistance 0.2 to 0.43 ohm, Continous Drain Current 9.2 A, Pulsed Drain Current -16 to 16 A. Tags: Surface Mount. More details for IGLR65R200D2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGLR65R200D2
  • Manufacturer
    Infineon Technologies
  • Description
    650 V, 0.2 to 0.43 ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 1.6 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    0.2 to 0.43 ohm
  • Continous Drain Current
    9.2 A
  • Pulsed Drain Current
    -16 to 16 A
  • Total Charge
    1.8 nC
  • Input Capacitance
    90 pF
  • Output Capacitance
    15 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TSON-8
  • Applications
    Telecom, Datacenter SMPS, Charger and adapter based on half-bridge topologies, Half-bridge topologies for hard and soft  switching such as Totem pole PFC, High frequency LLC

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products