The INN040W120A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for high-side load switches, over-voltage protection (OVP) in smartphone USB ports, and switch circuits in multiple power supplier systems applications. This transistor has a drain-source voltage of up to 40 V, a gate threshold voltage of less than 2.4 V, and a drain-source on-resistance of 9 milli-ohms. It has a continuous drain current of up to 10 A and a pulsed drain current of less than 50 A. This normally-off transistor is based on GaN-on-Silicon E-mode HEMT technology with bi-directional blocking capability to block positive or negative OFF-state voltage. It has an ultra-low on resistance which lowers power consumption for better power and thermal management. It is available in a wafer-level package that measures 1.2 x 1.7 mm.