The INN150LA070A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor. The transistor has a drain-source breakdown voltage of 150 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 7 milli-ohms. It has a continuous drain current of 28 A. This transistor is manufactured using Innoscience's GaN-on-Silicon HEMT technology and provides zero reverse recovery charge while requiring a very low gate charge of 7.6 nC, making it suitable for fast switching and low power loss applications. It is available in a surface-mount package that measures 3.2 x 2.2 mm and is ideal for synchronous rectification, class-D audio, high-frequency DC-DC converter, communication base station, and motor driver applications.