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INN40W08

GaN Power Transistor by Innoscience (83 more products)
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The INN40W08 from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.4 V, Drain Source Voltage 40 V, Drain Source Resistance 5.5 to 7.8 milli-ohm, Continous Drain Current 9 A, Pulsed Drain Current 15 A. Tags: Die. More details for INN40W08 can be seen below.

Product Specifications

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Product Details

  • Part Number
    INN40W08
  • Manufacturer
    Innoscience
  • Description
    40 V, 9 A, Bidirection GaN Transistor

General

  • Configuration
    Dual
  • Industry
    Industrial
  • Gate Threshold Voltage
    0.8 to 2.4 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    5.5 to 7.8 milli-ohm
  • Continous Drain Current
    9 A
  • Pulsed Drain Current
    15 A
  • Input Capacitance
    845 pF
  • Output Capacitance
    345 pF
  • Temperature operating range
    -40 to 125 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Package
    WLCSP
  • Applications
    High side load switch, OVP protection in smart phone USB port, Switch circuits in multiple power suppliers system
  • Dimensions
    2 X 2 mm
View details on the manufacturer's website
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