1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. Innoscience
  6. ISG6102

ISG6102

GaN Power Transistor by Innoscience (83 more products)
Download Datasheet Request Quote

Note : Your request will be directed to Innoscience.

The ISG6102 from Innoscience is a GaN Power Transistor with Drain Source Voltage -7 to 700 V, Drain Source Resistance 150 to 210 milli-ohm, Continous Drain Current 8 A, Pulsed Drain Current 16 A, Output Capacitance 27.6 pF. Tags: Surface Mount. More details for ISG6102 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    ISG6102
  • Manufacturer
    Innoscience
  • Description
    -7 to 700 V, 150 to 210 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Drain Source Voltage
    -7 to 700 V
  • Drain Source Resistance
    150 to 210 milli-ohm
  • Continous Drain Current
    8 A
  • Pulsed Drain Current
    16 A
  • Output Capacitance
    27.6 pF
  • Turn-on Delay Time
    25 ns
  • Turn-off Delay Time
    35 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    QFN
  • Applications
    AC-DC, DC-DC, DC-AC Power Supply, PFC, QR Flyback, ACF, Half Bridge, Full Bridge, PD Adaptor, LED Lighting, Solar Micro Inverter, Server and Telecom Power Supply
  • Dimensions
    6 x 8 mm

Technical Documents
View details on the manufacturer's website
View similar products

Latest GaN Transistors

View more products