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GPT65Z3YMR

GaN Power Transistor by MGT Technology (3 more products)
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The GPT65Z3YMR from MGT Technology is a GaN Power Transistor with Gate Threshold Voltage 1 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 245 to 500 milli-ohm, Continous Drain Current 6 to 9 A, Pulsed Drain Current 31 A. Tags: Surface Mount. More details for GPT65Z3YMR can be seen below.

Product Specifications

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Product Details

  • Part Number
    GPT65Z3YMR
  • Manufacturer
    MGT Technology
  • Description
    650 V, 245 to 500 milli-ohm, GaN Transistor

General

  • Configuration
    Dual
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    1 to 2.5 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    245 to 500 milli-ohm
  • Continous Drain Current
    6 to 9 A
  • Pulsed Drain Current
    31 A
  • Total Charge
    22 nC
  • Input Capacitance
    500 pF
  • Output Capacitance
    20 pF
  • Turn-on Delay Time
    20 ns
  • Turn-off Delay Time
    80 ns
  • Rise Time
    7 ns
  • Fall Time
    6 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Battery Chargers, Power Adapters, LED Lighting, AC/DC Converter, DC/DC Converter, Class D Audio Amplifiers
  • Dimensions
    8 x 8 mm

Technical Documents
View details on the manufacturer's website
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