The GAN063-650WSA from Nexperia is a GaN Power Transistor. It has a drain-source voltage of 650 V with a drain-source resistance of 50-60 milliohms and has a gate-source voltage of ±20 V. This GaN transistor has a continuous drain current of up to 34.5 A and power dissipation of up to 143 W. It is a normally-off transistor that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies. This transistor offers an ultra-low reverse recovery charge and has a high gate threshold voltage for very good gate bounce immunity. It delivers very low source-drain voltage in reverse conduction mode. This RoHS compliant transistor is available in a single-ended through-hole package that measures 20.45 x 15.6 x 4.95 mm and is ideal for hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, UPS inverters, and servo motor drives applications.