The GNP1150TCA-Z from ROHM Semiconductor is an Enhancement Mode GaN FET that is ideal for high switching frequency converters and high-density converter applications. It has a drain-source voltage of over 650 V, a gate-source voltage of –10 V to –6 V, and a drain-source on-resistance of 150 milli-ohms. This GaN transistor has a continuous drain current of up to 11 A and a pulsed drain current of less than 35 A. It offers low on-state resistance and high-speed switching, which results in an increased power conversion efficiency and reduced size. This EcoGaN series transistor includes built-in electrostatic discharge (ESD) protection and heat dissipation functionalities for a high-reliability design and facilitates easy mounting. It is available in a surface-mount package that measures 8 x 8 mm.