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SGF48N20M

GaN Power Transistor by Solid State Devices (20 more products)
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The SGF48N20M from Solid State Devices is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 200 V, Drain Source Resistance 11 to 16 milli-ohm, Continous Drain Current 40 A, Pulsed Drain Current 200 A. Tags: Through Hole. More details for SGF48N20M can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGF48N20M
  • Manufacturer
    Solid State Devices
  • Description
    200 V, 11 to 16 milli-ohm, 40 A GaN Transistor

General

  • Configuration
    Single
  • Industry
    Military, Space, Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    200 V
  • Drain Source Resistance
    11 to 16 milli-ohm
  • Continous Drain Current
    40 A
  • Pulsed Drain Current
    200 A
  • Total Charge
    9 to 11 nC
  • Input Capacitance
    950 to 1140 pF
  • Output Capacitance
    450 to 680 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-254
  • Applications
    High Efficiency DC-DC / PoL Converters, Motor Controller, Robotics/Automation

Technical Documents
View details on the manufacturer's website
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