The SGT120R65AL from STMicroelectronics is an Enhancement Mode GaN Power Transistor. The transistor has a drain-source breakdown voltage of 650 V and a gate threshold voltage of 1.8 V. It has a continuous drain current of 15 A and drain-source resistance of 75 milli-ohms. This transistor offers extremely low conduction losses and has a high current capability. It has extremely low capacitances and provides an ultra-fast switching operation to enable high power density and unbeatable efficiency performances. This power transistor has a zero reverse recovery charge and is based on GaN HEMT technology. It is available in a surface-mount package that measures 6.6 × 5.3 × 1 mm and is ideal for adapters for tablets, notebooks, USB Type-C PD adapters, quick chargers, and wireless chargers.