TDG100E90BSP

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TDG100E90BSP Image

The TDG100E90BSP from Teledyne e2v HiRel Electronics is a GaN Power Transistor with Gate Threshold Voltage 1.7 V, Drain Source Voltage 100 V, Drain Source Resistance 17.5 milli-ohm, Continous Drain Current 90 A, Pulsed Drain Current 140 A. More details for TDG100E90BSP can be seen below.

Product Specifications

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Product Details

  • Part Number
    TDG100E90BSP
  • Manufacturer
    Teledyne e2v HiRel Electronics
  • Description
    100V E-mode GaN transistor

General

  • Configuration
    Single
  • Gate Threshold Voltage
    1.7 V
  • Drain Source Voltage
    100 V
  • Drain Source Resistance
    17.5 milli-ohm
  • Continous Drain Current
    90 A
  • Pulsed Drain Current
    140 A
  • Total Charge
    8 nC
  • Applications
    High efficiency power conversion, High density power conversion, ac-dc Converters, Bridgeless Totem Pole PFC, ZVS Phase Shifted Full Bridge, Half & Full Bridge topologies, Synchronous Buck or Boost, Uninterruptable Power Supplies, Space Motor Drives, Solar and Wind Power, Fast Battery Charging, On Board Battery Chargers, E-Switch

Technical Documents

Latest GaN Transistors

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