The TDG100E90BSP from Teledyne e2v HiRel Electronics is a GaN Power Transistor with Gate Threshold Voltage 1.7 V, Drain Source Voltage 100 V, Drain Source Resistance 17.5 milli-ohm, Continous Drain Current 90 A, Pulsed Drain Current 140 A. More details for TDG100E90BSP can be seen below.