The TP65H015G5WS from Transphorm is an Enhancement Mode SuperGaN FET Power Transistor. This transistor has a gate threshold voltage of up to 20 V, a drain-source voltage of over 650 V, and a drain-source on-resistance of less than 18 mΩ. It has a continuous drain current of up to 95 A and power dissipation of less than 266 W. This GaN transistor combines state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. It utilizes Transphorm’s Gen V platform with advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon. This RoHS-compliant transistor is available in a through-hole package that measures 15.72 x 40.22 mm and is ideal for datacom, PV inverter, servo motor, and industrial applications.