The TP65H035WSQA from Transphorm is an Automotive Qualified GaN Field Effect Transistor that is ideal for automotive, datacom, PV inverter, and broad industrial applications. It has a drain-source voltage of over 650 V, a gate threshold voltage of 4 V, and drain-source on-resistance of less than 41 mΩ. This power transistor has a continuous drain current of up to 47.2 A and a pulsed drain current of less than 240 A. It is a normally-off device that combines state-of-the-art high voltage GaN HEMT and low-voltage silicon MOSFET technologies, thereby offering superior reliability and performance. 

This AEC-Q101 qualified transistor offers intrinsic lifetime tests, wide gate safety margin, and transient over-voltage capability, which results in a robust design. It is designed to provide an increased power density, reduced system size, and weight, and an overall lower system cost to enable AC-DC bridgeless totem-pole PFC designs. This RoHS-compliant transistor is available in a through-hole package that measures 15.72 x 40.22 mm.