The TP65H070LDG from Transphorm is a GaN Power Transistor. It has a drain-source voltage of 650 V with a drain-source resistance of 72-148 milli-ohms and has a gate threshold voltage of 3.3 to 4.8 V.  This GaN transistor has a continuous drain current of 16 to 25 A and a pulsed drain current of 120 A. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies, offering superior reliability and performance.

This transistor offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. It has dynamic drain-source on-resistance, transient over-voltage capability, very low reverse recovery charge,  and reduced crossover loss. This RoHS compliant transistor is available in a surface-mount package that measures 8 x 8 mm and is ideal for applications such as datacom, broad industrial, PV inverter, and servo motor.