The TP65H070LSG from Transphorm is an Enhancement Mode GaN Field Effect Transistor that is ideal for datacom, PV inverter, servo motor, AC-DC bridgeless totem-pole PFC designs, and broad industrial applications. It has a drain-source voltage of over 650 V, a gate threshold voltage of up to 4.8 V, and a drain-source on-resistance of less than 85 milli-ohms. This power transistor has a continuous drain current of up to 25 A and a pulsed drain current of less than 120 A. It is a normally-off device that combines state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, thereby offering superior reliability and performance. This GaN FET ensures improved power density, reduced system size and weight, and overall lower system cost, enabling AC-DC bridgeless totem-pole power factor correction (PFC) designs.

This JEDEC-qualified GaN FET offers improved efficiency over Silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. It also offers intrinsic lifetime tests, a wide gate safety margin, and transient over-voltage capability, which results in a robust design. This RoHS-compliant transistor achieves an increased efficiency in both hard and soft-switched circuit topologies, and is compatible with commonly-used gate drivers, thereby enabling seamless integration with existing designs. It is available in a surface-mount package that measures 8 x 8 mm.