EPC7009L16SH

Gate Driver by EPC Space (10 more products)

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The EPC7009L16SH from EPC Space is a Radiation-Hardened GaN Gate Driver Monolithic IC. It requires a DC supply voltage of 16 V and has been designed using EPC’s proprietary eGaN technology. This gate driver IC consists of a 5.25-10 V linear regulator, under-voltage lockout protection, and independent pull-up and pull-down circuits. It supports 3 V logic compatible input, inverting, and non-inverting logical inputs. This gate driver IC is capable of driving over 5000 pF loads and is integrated with a 10 V supply for interface for powering PWM controllers. 

The EPC7009L16SH can withstand radiation of up to 1000 krad (Si) for HDR (50-300 rad (Si)/s and 100 krad (Si) for LDR (100 mrads (Si)/s. It is available in a hermetically sealed ceramic QLCC surface mount package that measures 0.228 x 0.183 x 0.085 inches and is ideal for high-reliability space applications such as DC-DC conversion, satellite electrical, power switches/actuators, and motor drivers.

Product Specifications

Product Details

  • Part Number
    EPC7009L16SH
  • Manufacturer
    EPC Space
  • Description
    Rad-Hard GaN Gate Driver Monolithic IC

General

  • Types of Gate Driver
    Low Side Gate Driver
  • Technology
    GaN FET
  • Input Voltage
    9 to 11 V
  • Output Voltage
    4.50 to 5.75 V
  • Rise Time
    3.5 ns
  • Fall Time
    3.5 ns
  • Propagation Delay
    7 to 10 ns
  • Temperature operating range
    -55 to 110 Degree C
  • Industry
    Space, Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    16 Pin QLCC SMT
  • Dimensions
    0.228 x 0.183 x 0.085 inches
  • Applications
    DC-DC conversion, Satellite electrical, Power Switches/Actuators, Motor drivers

Technical Documents

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