The INS2002FQ from Innoscience is a Half-Bridge GaN Driver that is designed for the efficient driving of gallium nitride (GaN) field-effect transistors (FETs). It requires an input voltage of 4.5-5.5 V. This gate driver includes an internal smart bootstrap (BST) switch that prevents overcharging of the high-side driver supply during dead times, protecting the gate of the GaN FET. It also includes a feature wherein users can adjust dead times using external resistors for specific application needs. This driver features a single tri-state PWM input, allowing it to be driven high, low, or left floating for both sides of switches off. It offers split outputs to independently adjust turn-on and turn-off speeds.

This gate driver displays strong driving capability and fast propagation delay making it suitable for high-power and high-frequency applications. It supports a high-side floating supply that operates up to 100 V. It benefits from built-in UVLO, OVLO, and OTP protection for safe operation. It is available in a surface-mount package that measures 3 x 3 mm and is ideal for half-bridge and full-bridge converters, high-voltage synchronous DC-DC converters, 48 V DC motor drive, high power class-D audio power amplifiers, and automotive 48 V/12 V bi-directional DC-DC applications.