AOB30B65LN2V

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The AOB30B65LN2V from Alpha & Omega Semiconductor is an AEC-Q101 Qualified IGBT that is ideal for discharge switch, relay replacement, and PTC heater applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.86 V, and a gate-emitter threshold voltage of 4.7 V. This IGBT has a DC collector current of up to 60 A and a gate-emitter leakage current of less than 100 nA. It has a very low forward voltage and reverse recovery charge with a fast turn-on speed that ensures low turn-off switching loss and softness. This RoHS-compliant IGBT offers good EMI behavior with increased ruggedness and temperature-stable behavior in a surface mount package.

Product Specifications

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Product Details

  • Part Number
    AOB30B65LN2V
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    AEC-Q101 Qualified IGBT for Discharge Switches

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.86 V
  • DC Collector Current
    60 A
  • Peak Collector Current
    90 A
  • DC Forward Current
    10 to 20 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    100 nA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    227 W
  • Package
    TO-263 D2PAK
  • Package Type
    Surface Mount
  • Industry
    Industrial, Commercial
  • Applications
    Discharge switch, Relay replacement, PTC heater
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents

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