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IXXP12N65B4D1

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IXXP12N65B4D1 Image

The IXXP12N65B4D1 from Littelfuse is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 V, DC Collector Current 12 A, Junction Temperature -55 to 175 Degree C, Gate Emitter Leakage Current -0.1 to 0.1 uA. More details for IXXP12N65B4D1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXXP12N65B4D1
  • Manufacturer
    Littelfuse
  • Description
    650 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 V
  • DC Collector Current
    12 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    160 W
  • Package
    TO 220
  • Package Type
    Through Hole
  • Applications
    Power Inverters, UPS, Motor Drives, SMPS, PFC Circuits, Battery Chargers, Welding Machines, Lamp Ballasts

Technical Documents
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