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CM900DUC-24S

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CM900DUC-24S Image

The CM900DUC-24S from Mitsubishi Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 to 1.9 V, DC Collector Current 900 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.5 uA. More details for CM900DUC-24S can be seen below.

Product Specifications

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Product Details

  • Part Number
    CM900DUC-24S
  • Manufacturer
    Mitsubishi Electric
  • Description
    1200 V Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.55 to 1.9 V
  • DC Collector Current
    900 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    6520 W
  • Package Type
    Module
  • Applications
    AC Moter control, Motion servo control, Power supply
  • RoHS Compliant
    Yes

Technical Documents
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