AOK40B65H2AL

Note : Your request will be directed to Alpha & Omega Semiconductor.

The AOK40B65H2AL from Alpha & Omega Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2.05 to 2.71 V, DC Collector Current 40 to 80 A, Peak Collector Current 120 A, DC Forward Current 20 to 40 A. More details for AOK40B65H2AL can be seen below.

Product Specifications

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Product Details

  • Part Number
    AOK40B65H2AL
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    650 V, Single Switch IGBT

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2.05 to 2.71 V
  • DC Collector Current
    40 to 80 A
  • Peak Collector Current
    120 A
  • DC Forward Current
    20 to 40 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    105 to 260 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Industry
    Industrial, Commercial
  • Applications
    Welding Machines, Motor Drives, UPS & Solar Inverters, Very High Switching Frequency Applications
  • RoHS Compliant
    Yes

Technical Documents

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