AOK60B65H1

Note : Your request will be directed to Alpha & Omega Semiconductor.

The AOK60B65H1 from Alpha & Omega Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.88 to 2.6 V, DC Collector Current 60 to 120 A, Peak Collector Current 180 A, DC Forward Current 27 to 54 A. More details for AOK60B65H1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    AOK60B65H1
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    650 V, Single Switch IGBT

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.88 to 2.6 V
  • DC Collector Current
    60 to 120 A
  • Peak Collector Current
    180 A
  • DC Forward Current
    27 to 54 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.1 to 0.1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    250 to 500 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Industry
    Automotive, Industrial, Commercial
  • Applications
    Welding Machines, Motor Drives, UPS & Solar Inverters, Very High Switching Frequency Applications
  • RoHS Compliant
    Yes

Technical Documents

Latest IGBTs

View more products