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DGTD65T50S1PT

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The DGTD65T50S1PT from Diodes Incorporated is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.4 V, DC Collector Current 50 to 100 A, Gate Emitter Leakage Current 0.1 uA, Operating Temperature -40 to 175 Degree C. More details for DGTD65T50S1PT can be seen below.

Product Specifications

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Product Details

  • Part Number
    DGTD65T50S1PT
  • Manufacturer
    Diodes Incorporated
  • Description
    650 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.4 V
  • DC Collector Current
    50 to 100 A
  • Gate Emitter Leakage Current
    0.1 uA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    188 to 375 W
  • Package
    TO 247
  • Package Type
    Through Hole
  • Applications
    UPS, Welder, Solar Inverter, IH Cooker
  • RoHS Compliant
    Yes

Technical Documents
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