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DIM125PHM33-TL000

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DIM125PHM33-TL000 Image

The DIM125PHM33-TL000 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 2.8 V, DC Collector Current 125 A, Peak Collector Current 250 A, DC Forward Current 125 A. More details for DIM125PHM33-TL000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM125PHM33-TL000
  • Manufacturer
    Dynex Semiconductor
  • Description
    3300 V, Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 2.8 V
  • DC Collector Current
    125 A
  • Peak Collector Current
    250 A
  • DC Forward Current
    125 A
  • Peak Forward Current
    250 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    1uA
  • Collector Emitter Voltage
    3300 V
  • Power Dissipation
    1300 W
  • Package Type
    Module
  • Applications
    High Reliability Inverters, Motor Controllers, Traction Auxiliaries, Choppers

Technical Documents
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