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DIM650H2HS17-PA500

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DIM650H2HS17-PA500 Image

The DIM650H2HS17-PA500 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.70 V, DC Collector Current 650 A, Peak Collector Current 1300 A, DC Forward Current 650 A. More details for DIM650H2HS17-PA500 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM650H2HS17-PA500
  • Manufacturer
    Dynex Semiconductor
  • Description
    1700 V, Half Bridge Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT, Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.70 V
  • DC Collector Current
    650 A
  • Peak Collector Current
    1300 A
  • DC Forward Current
    650 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.5 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    4160 W
  • Package Type
    Module
  • Applications
    Motor Drives, High Power Converters, Renewable Energy Power Conversion, High Reliability Inverters

Technical Documents
View details on the manufacturer's website
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