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DIM900H2HS12-PA500

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DIM900H2HS12-PA500 Image

The DIM900H2HS12-PA500 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage 20 V, Saturated Collector Emitter Voltage 1.75 V, DC Collector Current 900 A, Peak Collector Current 1800 A, DC Forward Current 900 A. More details for DIM900H2HS12-PA500 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM900H2HS12-PA500
  • Manufacturer
    Dynex Semiconductor
  • Description
    1200 V Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • Dimensions
    172 x 38 mm
  • Saturated Collector Emitter Voltage
    1.75 V
  • DC Collector Current
    900 A
  • Peak Collector Current
    1800 A
  • DC Forward Current
    900 A
  • Gate Emitter Leakage Current
    0.5 µA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    4.23 kW
  • Package
    H2
  • Package Type
    Module
  • Applications
    Motor drives, power changing equipment, EV, inverters, renewable energy power conversion
  • Surge Current
    3800 A

Technical Documents
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