The 1MBI900V-120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.55 V, DC Collector Current 900 to 1800 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for 1MBI900V-120-50 can be seen below.