1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Fuji Electric
  6. 4MBI650VB-120R1-50

4MBI650VB-120R1-50

Download Datasheet Request Quote

Note : Your request will be directed to Fuji Electric.

4MBI650VB-120R1-50 Image

The 4MBI650VB-120R1-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.4 V, DC Collector Current 650 to 1300 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 1.2 uA. More details for 4MBI650VB-120R1-50 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    4MBI650VB-120R1-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Quad Channel IGBT Module

General

  • Types
    Quad Channel IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.4 V
  • DC Collector Current
    650 to 1300 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    1.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    3060 W
  • Package
    M404
  • Package Type
    Module
  • Applications
    Inverter for Moter drives, Uniterruptible power supply, Power Conditioner
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products