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6MBI75VW-120-50

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6MBI75VW-120-50 Image

The 6MBI75VW-120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.70 V, DC Collector Current 75 to 150 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.2 uA. More details for 6MBI75VW-120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    6MBI75VW-120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, Hex Channel IGBT Module

General

  • Types
    Hex Channel IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.70 V
  • DC Collector Current
    75 to 150 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    385 W
  • Package
    M647
  • Package Type
    Module
  • Applications
    Inverter for Moter drive, AC and DC servo drive amplifier, Uniterruptible power supply, Industrial machine, Welding machine
  • RoHS Compliant
    Yes

Technical Documents
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