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FF150R12MS4G

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FF150R12MS4G Image

The FF150R12MS4G from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.20 to 3.85 V, DC Collector Current 150 A, Peak Collector Current 300 A, DC Forward Current 150 A. More details for FF150R12MS4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF150R12MS4G
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Dual Switch IGBT Module

General

  • Types
    Dual Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.20 to 3.85 V
  • DC Collector Current
    150 A
  • Peak Collector Current
    300 A
  • DC Forward Current
    150 A
  • Peak Forward Current
    300 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1250 W
  • Package
    AG-ECONOD
  • Package Type
    Chassis Mount
  • RoHS Compliant
    Yes

Technical Documents
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