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7MBR35VKD120-50

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7MBR35VKD120-50 Image

The 7MBR35VKD120-50 from Fuji Electric is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.5 V, DC Collector Current 35 to 70 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.2 uA. More details for 7MBR35VKD120-50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    7MBR35VKD120-50
  • Manufacturer
    Fuji Electric
  • Description
    1200 V, IGBT Module

General

  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.5 V
  • DC Collector Current
    35 to 70 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    215 W
  • Package
    M729
  • Package Type
    Module
  • Applications
    Inverter for Moter drive, AC and DC servo drive amplifier, Uniterruptible power supply
  • RoHS Compliant
    Yes
  • Surge Current
    370 A

Technical Documents
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