FGW40N120VD

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FGW40N120VD Image

The FGW40N120VD from Fuji Electric is a Field Stop Trench IGBT that is ideal for uninterrupted power supplies (UPS), power conditioners, and power factor correction (PFC) applications. It has a collector-emitter voltage of less than 1200 V, a saturated collector-emitter voltage of 1.85 V, and a gate-emitter threshold voltage of 6.5 V. This IGBT has a DC collector current of up to 63 A and a gate-emitter leakage current of less than 200 nA. It offers low switching surge and noise with high reliability and ruggedness, resulting in low power loss. This IGBT is available in a through-hole package that measures 41.12 x 15.90 mm.

Product Specifications

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Product Details

  • Part Number
    FGW40N120VD
  • Manufacturer
    Fuji Electric
  • Description
    20 V Field Stop Trench IGBT for Power Conditioning Applications

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    41.12 x 15.90 mm
  • Saturated Collector Emitter Voltage
    1.85 V
  • DC Collector Current
    63 A
  • DC Forward Current
    30 to 58 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    200 nA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    220 to 340 W
  • Package
    TO247
  • Package Type
    Through Hole
  • Applications
    Inverter for Moter drives, AC and DC servo drive amplifiere, Uniterruptible power supply systems
  • RoHS Compliant
    Yes

Technical Documents

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