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VS-GT400TH60N

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VS-GT400TH60N Image

The VS-GT400TH60N from Vishay is a IGBT with Gate Emitter Voltage 20 V, DC Collector Current 400 to 530 A, DC Forward Current 400 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for VS-GT400TH60N can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GT400TH60N
  • Manufacturer
    Vishay
  • Description
    600 V ,Half Bridge IGBT Module

General

  • Types
    Half Bridge IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    20 V
  • DC Collector Current
    400 to 530 A
  • DC Forward Current
    400 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    1600 W
  • Package
    Dual INT-A-PAK
  • Package Type
    Chassis Mount
  • Applications
    UPS, Switching mode power supplies, Electronic welders
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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