Note : Your request will be directed to Hitachi.
The MDM800E33D from Hitachi is a IGBT with Saturated Collector Emitter Voltage 2.5 V, DC Collector Current 800 A, Collector Emitter Voltage 3300 V. More details for MDM800E33D can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
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